PURPOSE: To provide a gate electrode with low resistance and high melting point and obtain a semiconductor device excellent in the characteristic of high speed and high frequency by a method wherein the gate electrode composed of an interstitial transition metallic nitride or an interstitial transition metallic carbide is formed on an insulation film.
CONSTITUTION: The insulation film 22 is formed on a semiconductor substrate 20 of fixed conductivity type, and the gate electrode 24 of a fixed pattern composed of an interstitial transition metallic nitride or an interstitial transition metallic carbide is formed on the film 22. An impurity region 25 is so formed in the substrate 20 as to be aligned with the electrode 24, with the electrode 24 as the mask. Since the electrode 24 is formed in this manner, the seat resistance value can be reduced to an extremely small degree, resulting in low resistance, and accordingly high speed actions can be attained. Besides, manufacture can be performed by adopting self-alignment technique.
YOKOTA ETSUO
TSURU KAZUO
HACHIMAN SHIGEO
