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Patent Searching and Data


Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JPS6013392
Kind Code:
A
Abstract:

PURPOSE: To actuate a sense amplifier circuit on the basis of a programmed value by making the amplitude range of a real signal inputted to the sense amplifier circuit through a bit line coincide with the amplitude range of an input optimizing the effects such as the amplification factor of the sense amplifier circuit.

CONSTITUTION: Information read out from an optional memory cell in a memory cell array is amplified by the sense amplifier circuit 3 through the bit line. The sense amplifier circuit 3 is programmed so that its effects such as the amplification factor are maximized by the amplitude range of a signal inputted to the sense amplifier circuit 3 itself. Since power supply potential is supplied from the same power supply line 6 to the sense amplifier circuit 3 and a bit line pull-up transistor 2, the amplitude range of the signal inputted to the sense amplifier circuit 3 through the bit line coincides with the amplitude range of the input maximizing the effects of the sense amplifier circuit 3 without influence due to a wire resistance. Thus, the sense amplifier circuit 3 executes its optimum operation as designed.


Inventors:
ICHINOSE KATSUKI
ANAMI KENJI
Application Number:
JP12081383A
Publication Date:
January 23, 1985
Filing Date:
June 30, 1983
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G11C11/419; G11C11/34; (IPC1-7): G11C11/34
Attorney, Agent or Firm:
Masuo Oiwa