PURPOSE: To obtain the titled device performing high speed action on a single power source by a method wherein a memory cell is constructed by making a normally closed type GaAs-MESFET as a transfer gate, and the common source of a cell switching FET is grounded via GaAs Schottky diode.
CONSTITUTION: A GaAsMESFET capable of high speed action is used. The source potential of normally open type switching elements Q1 and Q2 having normally closed type elements Q3 and Q4 as the load becomes higher than the ground potential by about 0.7V which corresponds to a piece of Schottky diode SD; thereby the potential of an FF node comes to a range of 0.7∼VDD. On the other hand, when the potential of a word line WL is "0" by the conduction of the normally open type element Q9 of a driving circuit WD having the normally closed element Q10 as the load, the potential is lower than the FF node potential; therefore normally colsed type transfer gates Q7 and Q8 turn off, and cell information becomes held. When the WL potential is VDD in the OFF-state of the Q9, the Q7 and Q8 turn on and enable the write and readout of the cell. With this construction, the memory device of high speed action can be obtained by driving the WL by means of an E/D inverter WD operating on the same single power source VDD as that of the memory cell.
| JPH03150791 | SEMICONDUCTOR INTEGRATED CIRCUIT |
| JP2003085975 | SEMICONDUCTOR INTEGRATED CIRCUIT |
| JPH03256293 | SEMICONDUCTOR MEMORY |
KANAZAWA KATSUE
HOUJIYOU AKIMICHI
| JPS58148465A | 1983-09-03 | |||
| JPS5856288A | 1983-04-02 |