Title:
【発明の名称】超格子構造体,それを用いた電子またはホールの閉じ込め構造および半導体発光素子
Document Type and Number:
Japanese Patent JP3181063
Kind Code:
B2
Abstract:
A semiconductor luminous element has cladding layers on both sides of its active layer; and it has a multi-quantum barrier layer which is in contact with the active layer on at least a portion of at least one of the cladding layers. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer. A superlattice structure for semiconductor devices, which confines electrons and holes, is formed out of the active layer and a cladding layer provided on at least one side of that active layer. A multi-quantum barrier layer is in contact with the active layer on at least a portion of the cladding layer. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer.
Inventors:
Kenichi Iga
Fumio Koyama
Go Takagi
Fumio Koyama
Go Takagi
Application Number:
JP5544291A
Publication Date:
July 03, 2001
Filing Date:
February 28, 1991
Export Citation:
Assignee:
Kenichi Iga
Fumio Koyama
Omron Corporation
Fumio Koyama
Omron Corporation
International Classes:
B82Y10/00; B82Y20/00; H01L21/20; B82Y40/00; H01S5/00; H01S5/343; H01S5/20; (IPC1-7): H01S5/343; H01L21/20
Domestic Patent References:
| JP1298786A |
Other References:
電子情報通信学会論文誌 Ｃ−Ｉ Ｖｏｌ．Ｊ７４−Ｃ−Ｉ，Ｎｏ．１２，ｐｐ．５２７−５３５
Attorney, Agent or Firm:
Kenji Ushiku