Title:
【発明の名称】三元窒化物-炭化物バリア層
Document Type and Number:
Japanese Patent JP2002524859
Kind Code:
A
Abstract:
A microelectronic structure including adjacent material layers susceptible of adverse interaction in contact with one another, and a barrier layer interposed between said adjacent material layers, wherein said barrier layer comprises a binary, ternary or higher order metal nitride-carbide material, whose metal constituents are different from one another and include at least one metal selected from the group consisting of transition metals Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Sc and Y, and optionally further including Al and/or Si. The barrier layer is stoichiometrically constituted to be amorphous or nanocrystalline in character, and may be readily formed by techniques such as chemical vapor deposition, sputtering, and plasma-assisted deposition, to provide a diffusional barrier of appropriate resistivity character for structures such as DRAMs or non-volatile ferroelectric memory cells.
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Inventors:
Van Baskirk, Peter, Sea.
Russell, Michael, W.
Russell, Michael, W.
Application Number:
JP2000568127A
Publication Date:
August 06, 2002
Filing Date:
August 26, 1999
Export Citation:
Assignee:
Advanced Technology Materials Incorporated
International Classes:
C23C14/34; H01L21/02; H01L21/28; H01L21/285; H01L21/3205; H01L21/8242; H01L21/8246; H01L23/52; H01L23/532; H01L27/105; H01L27/108; H01L29/92; (IPC1-7): H01L27/105; C23C14/34; H01L21/285; H01L21/3205; H01L21/8242; H01L27/108
Attorney, Agent or Firm:
Yoshiyuki Inaba (2 outside)