Title:
LIQUID PHASE EPITAXIAL GROWTH METHOD
Document Type and Number:
Japanese Patent JPS5930797
Kind Code:
A
Abstract:
PURPOSE:To reduce the concn. of various impurities and to carry out liq. phase epitaxial growth for a light emitting element, etc., by using 2 kinds of melts as starting materials in the formation of one layer so as to utilize the segregation action. CONSTITUTION:An epitaxial growth apparatus is put in a reaction furnace and heated. By moving the slide plate 22, the 1st melt 24 contg. an impurity is brought into contact with a substrate 25, a layer n0 is grown by cooling, and the plate 22 is moved to separate the melt 24. The apparatus is heated again, the plate 22 is moved to bring the 2nd melt 26 contg. no impurity into contact with the substrate 25, and a part or all of the layer n0 is solubilized in the melt 26 by heating. A layer n1 is formed under cooling, a layer n2 is formed, and finally a p type layer is formed by feeding Zn at a higher concn. than the concn. in an n type layer. By this method, liq. phase epitaxial growth for a light emitting GaP element with superior luminous efficiency, etc. is carried out industrially.
Inventors:
ITOU TOSHIFUMI
TAMURA TAKATERU
TAKAHASHI TOSHIHARU
NAKAMURA AKIO
TAMURA TAKATERU
TAKAHASHI TOSHIHARU
NAKAMURA AKIO
Application Number:
JP14189682A
Publication Date:
February 18, 1984
Filing Date:
August 16, 1982
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
International Classes:
C30B19/00; C30B19/06; C30B29/40; C30B29/44; C30B31/04; H01L21/208; H01L21/228; (IPC1-7): C30B19/00; C30B29/44; C30B31/04; H01L21/228
Domestic Patent References:
| JPS52155081A | 1977-12-23 | |||
| JPS5453977A | 1979-04-27 | |||
| JPS54133093A | 1979-10-16 | |||
| JPS5437472A | 1979-03-19 | |||
| JPS4719365A |
Attorney, Agent or Firm:
Ryoichi Yamamoto