Title:
WAFER OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL, ITS PRODUCTION PROCESS AND EPITAXIAL GROWTH
Document Type and Number:
Japanese Patent JPH0710678
Kind Code:
A
Abstract:
PURPOSE: To produce single crystal wafer of compound semiconductor which can form uniform membrane on the epitaxial growth by the boat method.
CONSTITUTION: The concentration deviation of contaminants added to the crystal is made large, namely ±6% or higher in the wafer face cut out of the single crystal of the compound semiconductor produced by the boat method. Further, the crystal is allowed to grow so that the angle θ between the face of the wafer 2 to be cut out and the crystal growth interface 1a, 1b is set over 30°.
Inventors:
MURATA KOICHI
ISHIHARA TOMOYUKI
ISHIHARA TOMOYUKI
Application Number:
JP18068493A
Publication Date:
January 13, 1995
Filing Date:
June 25, 1993
Export Citation:
Assignee:
ASAHI GLASS CO LTD
International Classes:
C30B11/00; C30B11/14; C30B19/12; C30B29/42; H01L21/208; (IPC1-7): C30B11/00; C30B11/14; C30B19/12; C30B29/42; H01L21/208
Attorney, Agent or Firm:
Kenji Izumina
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