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Title:
HALFTONE TYPE PHASE SHIFT MASK BLANK AND HALFTONE TYPE PHASE SHIFT MASK
Document Type and Number:
Japanese Patent JPH0764271
Kind Code:
A
Abstract:

PURPOSE: To prevent the electrification by charge accumulation and static electricity at the time of electron beam plotting with simple film constitution by providing the surface of a transparent substrate with a specific translucent film in a single layer form for the purpose of forming light transparent parts.

CONSTITUTION: This halftone type phase shift mask blank is constituted by forming the translucent film 2a on the transparent substrate 1 and this halftone type phase shift mask is constituted by subjecting the translucent film 2a of the halftone type phase shift mask blank to a patterning treatment to remove a part along the prescribed patterns to form the mask patterns composed of the light translucent parts 2 and the light transparent parts 3. The transparent substrate 1 is a quartz glass substrate subjected to mirror polishing on its main surface. Such translucent film 2a of the single layer form has a property to allow the transmission of light of the intensity not substantially contributing to exposing and a property to shift the phase of the exposing light by a prescribed quantity and simultaneously has an electric conductivity to the extent of not electrifying the charges or above at the time of electron plotting in combination.


Inventors:
AMAMIYA ISAO
YASUNAKA NORIMICHI
Application Number:
JP21647793A
Publication Date:
March 10, 1995
Filing Date:
August 31, 1993
Export Citation:
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Assignee:
HOYA CORP
International Classes:
G03F1/32; G03F1/68; G03F1/80; H01L21/027; (IPC1-7): G03F1/08; H01L21/027
Attorney, Agent or Firm:
Setsuo Aniya (2 outside)



 
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