Title:
【発明の名称】ビニルモノマー、重合体、フォトレジスト組成物、及びそれを用いたパターン形成方法
Document Type and Number:
Japanese Patent JP2856116
Kind Code:
B2
Abstract:
The present invention provides a vinylmonomer represented with the following general formula (I): om or a methyl group, R2 represents a dihydric, bridged cyclic hydrocarbon group having a carbon number in the range of 7 to 13 both inclusive, R3 represents a group to be decomposed by acid or a hydrogen atom, X represents an alkylene group or a coupling group composed of an oxygen-carbon bond, and Y represents an alkylene group or a coupling group composed of a carbon-carbon bond. A photoresist obtained by polymerizing a monomer in accordance with the invention has a high transparency to FUV having a wavelength of at greatest 220 nm, high sensitivity and resolution to FUV, and a high dry etching resistance, and hence is suitable for exposure light such as FUV having a wavelength of at greatest 220 nm and, in particular, ArF excimer laser. The photoresist makes it possible to carry out fine patterning required for the fabrication of a semiconductor element.
Inventors:
MAEDA KATSUMI
NAKANO KAICHIRO
OOFUJI TAKESHI
HASEGAWA ETSUO
NAKANO KAICHIRO
OOFUJI TAKESHI
HASEGAWA ETSUO
Application Number:
JP20315095A
Publication Date:
February 10, 1999
Filing Date:
August 09, 1995
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
C07C61/35; C07C69/00; C07C69/753; C07C69/757; C07D307/20; C07D309/10; C07D309/12; C08F20/26; C08F20/28; C08K5/00; C08L33/04; C08L33/14; G03F7/004; G03F7/039; H01L21/027; (IPC1-7): C07C61/35; C07C69/757; C07D309/12; C08F20/26; C08K5/00; C08L33/14; G03F7/004; G03F7/039; H01L21/027
Domestic Patent References:
| JP7252324A | ||||
| JP5265212A | ||||
| JP6333350A | ||||
| JP9105810A | ||||
| JP8201611A | ||||
| JP8194109A | ||||
| JP8194108A | ||||
| JP8194107A | ||||
| JP812626A | ||||
| JP58221841A | ||||
| JP63113007A |
Other References:
Ｊ．Ｐｈｏｔｏｐｏｌｙｍｅｒ Ｓｃｉ．Ｔｅｃｈ．，（１９９５）８（４）ｐ．６２３−６２６
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)