PURPOSE: To shorten the time for lowering the temperature of a pedestal and to obtain a multilayer epitaxial layer whose interface is steep by a method wherein a cooling means by a fluid is installed at the pedestal on which a wafer is placed.
CONSTITUTION: A wafer is placed on a pedestal 5, a raw-material gas an a carrier gas are made to flow in the direction of a solid-line arrow, and an epitaxial growth operation is performed. Then, when it is required to perform the epitaxial growth operation to a multilayer and it is required to lower the temperature of the pedestal 5 to a temperature which is lower than an epitaxial growth temperature in a previous operation, a cooling gas is made to flow to a cooling-gas passage 6 inside the pedestal 5 from a quartz tube 7 for cooling, the pedestal 5 is cooled, and the wafer is cooled (as shown by a dotted-line arrow). The cooling gas is passed through the cooling-gas passage 6, the pedestal 5 is removed of heat, the heat flows out between a quartz reaction tube 1 and a quartz cylinder 3 from a hole 6b, and the heat is discharged to the outside of the quartz reaction tube 1. Thereby, the pedestal 5 is cooled, and the temperature of the wafer is lowered to an epitaxial growth temperature for a next operation.
NAKAZONO RYUICHI
UNNO TSUNEHIRO
| JPS63207121A | 1988-08-26 | |||
| JP62092637B |