PURPOSE: To stabilize a fine pattern almost close to the resolution limit of an aligner, by forming a second resist on the area where the first resist pattern surface is not completed, then developing the first pattern to remove.

CONSTITUTION: A first positive resist film 12 is formed on the surface of a SiO2. A mask 13 where a pattern opposite to a targeted pattern is formed is used to expose and develop the first positive resist film 12 so that the first resist pattern 12a is formed. A second positive resist film 14 is formed at a part where that first resist pattern 12a is not formed, then, it is developed to eliminate the first resist pattern 12a. This enables a fine pattern almost close to the resolution limit of an aligner to be formed stably.