DIE-BONDING METHOD - TOSHIBA KK

Title:

DIE-BONDING METHOD

Document Type and Number:

Japanese Patent JPS5987825

Kind Code:

A

Abstract:

PURPOSE:To bond a semiconductor laser-chip to a sub-mount with reliability and high efficiency without leaving a thermal strain by instantaneously heating a section in the vicinity of bonding by feeding high currents to a heating element. CONSTITUTION:An inert gas heated from a gas heater 14 is blown off in the direction of an arrow 17, and a capillary 11, the semiconductor laser-chip 13 sucked and held to the capillary 11 and the sub-mount 8 placed on the heating element 7 are heated. The capillary 11 is dropped, and the semiconductor laser- chip 13 is pressed against the sub-mount 8 in approximately 10g. When high currents are fed to the heating element 7 from a welding power supply for 1-5sec, the temperature of the heating element 7 is elevated up to a temperature set previously. Accordingly, a bonding-inserting material consisting of either of an Au-Sn group solder material, an Au-Si group solder material, an In solder material or a Sn-Pb group solder material interposing between the heating element and the semiconductor laser-chip 13 evaporated on the surface of the sub-mount 8 is melted, and the semiconductor laser-chip 13 is die-bonded with the sub- mount 8.

Inventors:

YAMAMOTO TOSHIO

Application Number:

JP19675882A

Publication Date:

May 21, 1984

Filing Date:

November 11, 1982

Export Citation:

Click for automatic bibliography generation Help