Title:
MANUFACTURE OF SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS609116
Kind Code:
A
Abstract:
PURPOSE:To form a dense thin film under a low temperature by confining a laser light and forming a thin film utilizing an energy of such laser light by irradiating the conductor substrate with the infrared laser light through a prism and totally reflecting the laser light within said substrate. CONSTITUTION:A tunable CO2 laser 41 is converted to the beams like a sheet by an optical system 42 and an Si substrate 44 is irradiated with such beams through a prism 43. The incident angle is set to the total reflection critical angle of 16.3 degree or more which is determined by refractive index of 3.42 of Si for the wavelength of CO2 laser and the laser beam is confined within the Si substrate. The Si substrate is fixed within a reaction cell formed by the jigs 45, 46 and O-rings 47, 48. The SiH4 of atmospheric pressure is supplied into the reaction cell through a gas supply pipe 49 and a thin film of Si is formed by decomposition.
Inventors:
MOTOOKA TERUAKI
SHINTANI AKIRA
OKUDAIRA HIDEKAZU
SHINTANI AKIRA
OKUDAIRA HIDEKAZU
Application Number:
JP11584483A
Publication Date:
January 18, 1985
Filing Date:
June 29, 1983
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/205; H01L21/263; (IPC1-7): H01L21/205; H01L21/263
Attorney, Agent or Firm:
Akio Takahashi
Next Patent: PLASMA CVD APPARATUS