Title:
MANUFACTURE OF PHOTOELECTRIC CONVERTER
Document Type and Number:
Japanese Patent JPS6041267
Kind Code:
A
Abstract:
PURPOSE:To increase the output current of a photoelectric converter having a PIN junction by adding diboran to have density difference of 1/10-1/30 at the NI junction side/PI junction side to an I type semiconductor layer. CONSTITUTION:The first electrode 2, a P type nonsingle crystal semiconductor layer 3, an I type nonsingle crystal semiconductor layer 4, an N type nonsingle crystal semiconductor layer 5, the second electrode 6, and a reflecting back surface electrode 6' are laminated on a light transmission substrate 1 having an insulating surface to form a photoelectric converter. The layer 4 is formed by a CVD method while detecting by a mass analyzing method the addition amount of boron in the density of boride gas to 0 boron silicon 50ppm to silicide gas. The density of diboran in the I type semiconductor layer is in a range of 0.05- 50ppm, and the NI junction surface/PI junction surface side becomes 1/5 and more preferably 1/10-1/30 in density difference.
Inventors:
YAMAZAKI SHIYUNPEI
Application Number:
JP14935683A
Publication Date:
March 04, 1985
Filing Date:
August 16, 1983
Export Citation:
Assignee:
HANDOTAI ENERGY KENKYUSHO
International Classes:
H01L31/04; H01L31/075; H01L31/18; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS564287A | 1981-01-17 | |||
| JPS56138970A | 1981-10-29 |
Attorney, Agent or Firm:
Asao Kamoda (1 person outside)
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