Title:
DC BOOSTER CIRCUIT
Document Type and Number:
Japanese Patent JPS5925575
Kind Code:
A
Abstract:
PURPOSE:To enable the same time manufacturing of the DC booster circuit with the IGFETs of another integrated circuit part without increasing the manufacturing process, and moreover to enhance conversion efficiency by a method wherein IGFETs are used, and the gates thereof are driven by output of an inverter constructed of complementary IGFETs. CONSTITUTION:When electric potential of a signal terminal 15 becomes to electric potential VD the same with the voltage of a DC electric power source, the complementary IGFET inverter Q3P conducts, the complementary IGFETs Q1P, Q4N conduct, the complementary IGFET Q2N becomes to unconducting to charge a capacitor C11, and a node 11 becomes to electric potential VD. When electric potential of the signal terminal 15 becomes to zero next, the conditions of the respective complementary IGFETs are reversed, and electric potential of a node 16 becomes to the electric power source voltage VD. Action thereof is repeated, and electric potential of an output terminal 12 is made to hold the double value 2VD of the electric power source voltage.
Inventors:
TAKEGAWA TOUJIROU
Application Number:
JP12592183A
Publication Date:
February 09, 1984
Filing Date:
July 11, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H02M3/07; (IPC1-7): H02M3/06
Attorney, Agent or Firm:
Uchihara Shin