Title:
MANUFACTURE OF METAL OXIDE SEMICONDUCTOR TYPE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59105368
Kind Code:
A
Abstract:
PURPOSE: To enable to manufacture an MOS semiconductor device of high quality with good yield by eliminating instability factors by removing the surface layer of an insulation film.
CONSTITUTION: A resist film is exfoliated with plasma, next damaged surface parts of an oxide film 2 are removed by etching, and a poly Si gate electrode 15, source and drain aluminum electrodes 16 are formed. Thus, non-defective electrodes can be formed unlike the case of a damaged oxide by removing the damaged surface part of the oxide film 2, exposing a clean surface, and then providing the source-drain electrodes.
Inventors:
TOKODA SABUROU
Application Number:
JP21505482A
Publication Date:
June 18, 1984
Filing Date:
December 08, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/78; (IPC1-7): H01L29/78
Attorney, Agent or Firm:
Uchihara Shin