Title:
MANUFACTURE OF PHOTO SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5935487
Kind Code:
A
Abstract:
PURPOSE:To enable to suppress the interval between isolation regions to the minimum by a method wherein two electrode layers and a photo conductor layer formed extending over photo sensitive regions of the plural number are divided by irradiation of an energy beam after the laminate thereof is formed. CONSTITUTION:The transparent electrode layer 2 whose terminal parts 6a-6d are extended is formed on a transparent substrate 1. Then the photo conductor layer 3 is formed in the condition exposing the terminal parts 6a-6d. Then the back electrode 4 is adhered covering the layer 3. At this adhering process, extended parts 5ab-5cd from the layer 4 are connected electrically to the terminal parts 6a-6c. Then the adjoining interval parts 9ab-9cd of the laminate consisting of the layers 2-4 are removed according to irradiation of the laser beam to form the isolation regions 8ab-8cd. Accordingly, the optoelectric conversion regions 7a-7d of the plural number are isolated electrically according to the regions 8ab-8cd. According to this manufacturing method, the interval between isolation regions can be suppressed to the minimum, and utilization efficiency of light can be increased at a solar battery.
Inventors:
YOKOO TOSHIAKI
SHIBUYA TAKASHI
TAKEUCHI MASARU
SHIBUYA TAKASHI
TAKEUCHI MASARU
Application Number:
JP14736082A
Publication Date:
February 27, 1984
Filing Date:
August 24, 1982
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L31/04; H01L31/0224; H01L31/18; (IPC1-7): H01L31/04
Domestic Patent References:
| JP36005464A | ||||
| JPS5126064U | 1976-02-26 |
Foreign References:
| US4315096A | 1982-02-09 |
Attorney, Agent or Firm:
Takuji Nishino