PURPOSE: To largely improve the withstand voltage of a GaAsFET by forming a buffer layer using an AlGaAs layer doped with O2 and laminating an active layer composed of GaAs doped with Si thereon.
CONSTITUTION: The buffer layer 2 composed of the AlGaAs layer doped with O2 is formed on a semi-insulation substrate 1 by a molecular ray epitaxial growing method. On the AlGaAs layer 2, the active layer 3 composed of the GaAs doped with Si as an N type impurity is grown. The GaAsFET is completed by forming a gate electrode 4 in Schottky contact with the active layer 3 and a source 5 and a drain electrode 6 in ohmic contact with the active layer 3. The buffer layer can be increased in insulation thereby, therefore the GaAsFET can be more increased in withstand voltage.
NISHI HIDETOSHI
HIRACHI YASUTAKA
| JPS5595370A | 1980-07-19 | |||
| JPS51103783A | 1976-09-13 |