PURPOSE: To obtain stable performance, excellent photosensitivity on a long wavelength side and good durability by consisting of a photoreceptive layer of the 1st conductive layer composed of a-SiGe and the 2nd layer composed of a-SiC, incorporating N in the 1st layer and forming specifically distributed densities in the layer thickness direction.
CONSTITUTION: A photoconductive layer has a base 101 and a photoreceptive layer consisting of the 1st layer I 102 constituted of a-SiGe and exhibiting photoconductivity and the 2nd layer II103 constituted of a-SiC. N atom is incorporated into the layer I 102 and said layer has the 1st layer region 104, the 3rd layer region 106 and the 2nd layer region 105 in which the densities distributed in the layer thickness direction thereof are made to respectively C1, C2, C3. The C3 does not independently attain the max. value and when any among C1W3 is 1 or 0, the other two are not 0 and are not equal. The H atom or halogen atom is incorporated into the layer I 102 and the distribution condition of Ge may be uniform or nonuniform. A material governing conductivity, for example, the atom of the III group or V group is incorporated. Electrical, optical and photoconductive characteristics such as dark resistance, photosensitivity, photoresponsiveness, environmental characteristics, stability with age, etc. are improved overall by the above-mentioned constitution.
OONUKI YUKIHIKO
OONO SHIGERU
