Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5818929
Kind Code:
A
Abstract:
PURPOSE:To readily obtain a stable layer with no defect by subjecting a Si crystal to heat treatment in an inert gas atmosphere as follows: 24hr at 600-800 deg.C, 30min at 700-1,100 deg.C (applied more than once) and finally 3hr at 1,000-1,200 deg.C. CONSTITUTION:A Si crystal is constantly subjected to an atmosphere of N2, etc. where it is heat-treated at 600-800 deg.C 24hr, then, after lowering to the normal temperature, at 700-1,100 deg.C for 30min and again its temperature is reduced to the normal. Applying this short-time treatment more than once reduces the amount of O2, and therefore a stable layer without defects can be obtained. Further heat treatment at 1,000-1,200 deg.C for 3hr will produce an 80mum thickness, non-defect layer, its thickness being varied according to the treatment period.
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Inventors:
HONDA KOUICHIROU
OOSAWA AKIRA
OOSAWA AKIRA
Application Number:
JP11694881A
Publication Date:
February 03, 1983
Filing Date:
July 24, 1981
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/322; H01L21/324; (IPC1-7): H01L21/324
Attorney, Agent or Firm:
Koshiro Matsuoka