PURPOSE: To improve the capacitance of a thin film capacitor while the thickness of the capacitor is reduced so as to improve the temperature and frequency characteristics of its dielectric constant by applying the solution of an organometallic compound of MgTiO3 which becomes dielectric to a conductive film after the conductive film is heat-treated, and heat-treating the applied solution.

CONSTITUTION: A conductive film obtained by forming a single layer of a metallic film of Pt, Au, Ni, Cr, etc., or piling up metallic films of one of these metals on a conductive substrate 3 of Si, etc., or an insulating substrate of Al2O3 or glass is used as the lower electrode of this capacitor. A dielectric thin film 2 expressed by MgTiO3 is formed on the lower electrode. The film 2 is formed by applying a precursor solution of a compound which becomes the MgTiO3 after heat treatment to an electrode 1 and heat-treating the applied solution. The precursor solution of the compound is obtained by mixing alcoxides of metallic magnesium and titanium in a solvent, such as butanol, 2- methoxyethanol, etc., at a Mg/Ti molar ratio of '1' and allowing them to react to each other.