Title:
X-RAY MASK AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPS5957433
Kind Code:
A
Abstract:
PURPOSE:To obtain the fine X-ray mask of high accuracy, in which there are few manufacturing processes and mass productivity thereof is excellent, by forming a Re absorber pattern on an X-ray mask substrate. CONSTITUTION:The X-ray mask substrate 1 is formed on an Si wafer 5, and a Re film 2a as an absorber is formed on the substrate in the thickness of approximately 8,000Angstrom through either of an evaporation, sputtering or ion plating method. The Re film 2a is spin-coated with a resist 6, and a fine pattern is formed through ultraviolet exposure, electron beam exposure, ion beam exposure or the like. The Re film 2a as the absorber is etched through reactive sputtering etching using CBrF3 gas while using the fine pattern 6 of the resist as a mask, and the Re absorber pattern is formed. Lastly, the Si wafer 5 is etched only by desired sections to form the X-ray mask.
Inventors:
YOSHIHARA HIDEO
OZAWA AKIRA
SEKIMOTO MISAO
ONO TOSHIROU
OZAWA AKIRA
SEKIMOTO MISAO
ONO TOSHIROU
Application Number:
JP16818782A
Publication Date:
April 03, 1984
Filing Date:
September 27, 1982
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
G03F1/00; G03F1/22; H01L21/027; H01L21/302; H01L21/3065; (IPC1-7): G03F1/00
Domestic Patent References:
| JPS5347663A | 1978-04-28 | |||
| JPS5279069U | 1977-06-13 | |||
| JPS52139375A | 1977-11-21 | |||
| JPS5616137A | 1981-02-16 |
Attorney, Agent or Firm:
Tsuneo Shiramizu