Title:
FORMING OF THIN FILM
Document Type and Number:
Japanese Patent JPS593931
Kind Code:
A
Abstract:
PURPOSE:To easily form any desired thin film on a silicon substrate in a short time without the need of a large-scaled apparatus by a method wherein a compound film formed through the photochemical reaction is adhered onto the semiconductor substrate. CONSTITUTION:An Si wafer 1 including a semiconductor device is introduced on a heat-resistant susceptor 6 placed over a belt 3B within a treatment chamber 4, and the interior of the treatment chamber 4 is exhausted after closing a gate valve 5A. Mixture gas of monisilane gas, phosphine gas and nitrous oxide gas is introduced from a gas inlet port 8, a UV beam is irradiated to the mixture gas through a quartz plate 10 provided with slits using a light source as a xenon lamp 9, thereby to coat a PSG film on the Si wafer 1 through the photochemical reaction. Since the PSG film is easily coated on the Si substrate 1 in a short time by heating only due to the light, it becomes possible to treat the Si substrate including a semiconductor device with relatively ease.
Inventors:
SHIOTANI YOSHIMI
Application Number:
JP11370482A
Publication Date:
January 10, 1984
Filing Date:
June 29, 1982
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/268; C23C16/48; H01L21/31; H01L21/316; (IPC1-7): H01L21/263
Attorney, Agent or Firm:
Sadaichi Igita