Title:
CRYSTAL GROWTH
Document Type and Number:
Japanese Patent JPS5849700
Kind Code:
A
Abstract:
PURPOSE:To control easily the mol fraction of cadmium telluride in mercury cadmium telluride crystal, by bringing a melt consisting of mercury and tellurium into contact with a crystal base plate of cadmium telluride. CONSTITUTION:In preparing an epitaxial crystal of HgCdTe on a crystal base plate of CdTe by epitaxial growth method in liquid phase, the melt 6 consisting of two components of Hg and Te as melt materials is put in the melt container 5b of the boat 5, kept in the furnace pipe 1, and heated at a given temperature. The melt is drawn by the pulling bar 4b, the melt 6 is brought into contact with the crystal base plate 7 of CdTe and Cd is dissolved in the melt. The amount of Cd dissolved from the crystal base plate 7 of CdTe into the melt 6 can be controlled by selecting properly the contact temperature and the cooling rate during crystal growth.
More Like This:
| JP2842012 | [Title of Invention] Antioxidant for Immersion Nozzle |
| WO/1986/001835 | AMORPHOUS ALLOY AND PROCESS FOR ITS PRODUCTION |
| JPS60191006 | PRODUCTION OF CHALCOGENIDE POWDER |
Inventors:
NAGAHAMA KOUKI
NISHITANI KAZUO
ISHII JIYUN
NISHITANI KAZUO
ISHII JIYUN
Application Number:
JP14820981A
Publication Date:
March 23, 1983
Filing Date:
September 19, 1981
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
C01B19/04; C30B19/00; C30B19/04; C30B29/48; H01L21/208; H01L31/18; (IPC1-7): C01B19/00; C30B19/00; C30B29/48; H01L31/18
Attorney, Agent or Firm:
Shinichi Kusano