Title:
LIGHT EMITTING DIODE
Document Type and Number:
Japanese Patent JPS6054484
Kind Code:
A
Abstract:
PURPOSE:To externally lead a light generated near a P-N junction of a light emitting diode in high efficiency in which electrodes are formed on both outsides of a semiconductor substrate formed with the junction for emitting a light in a direction parallel to the junction surface by forming the portion having high current density between the both electrodes in a cylindrical axis, and forming a cylindrical surface on the light emitting surface with the asix as an origin. CONSTITUTION:P type and N type semiconductor layers are contacted to produce a P-N junction surface C in the boundary, P-side electrode AP and N-side electrode AN are respectively formed on both surfaces of the layers, and a light is emitted from the end faces of the layers in parallel with the surface C. In this structure, the portion of the junction C which has the highest current density disposed between the electrodes AP and NP is selectively formed in a cylindrical axis B, the junction end is formed in a cylindrical shape at the point as an origin, as a light emitting surface E. Thus, the light generated from the axis B is directed toward the surface E while setting the axis b is directed toward the surface E while setting the incident angle to 0, the light of the expanding amount is reflected on the surface E, and contributed to emission.
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Inventors:
NANBA YASUHIRO
MATSUDA MOTONOBU
MATSUDA MOTONOBU
Application Number:
JP16393083A
Publication Date:
March 28, 1985
Filing Date:
September 05, 1983
Export Citation:
Assignee:
MINOLTA CAMERA KK
International Classes:
G01C3/06; G01C3/00; G02B7/32; H01L33/20; H01L33/30; H01L33/58; H01L33/62; (IPC1-7): G01C3/06; H01L33/00