Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5925248
Kind Code:
A
Abstract:
PURPOSE:To enable the positioning of both first and second contact sections and the determination of the shape of a semiconductor layer simultaneously by determining an interval between both contact sections by a second insulating film consisting of an oxide of the semiconductor layer. CONSTITUTION:An N type silicon substrate 11 is thermally oxidized to form a silicon oxide film 12, and an opening section 13 is formed. A silicon thin-film 14 is formed to the whole surface of the substrate exposed by the opening section 13, and B is introduced into the substrate 11 through the thin-film to form a P type base region 15. A silicon nitride film 16 is formed, and the film 16 except a section functioning as an electrode wiring path is removed. The film 14 is converted into a silicon oxide 17, a film 16' is removed and P is introduced, and an emitter region 18 converted into an N type and the electrode wiring path (a silicon thin-film) 14' ohmic-connected to the region 18 are obtained. The film 16 is removed and a silicon oxide film 17' is formed, but the thin-films 14, 14' are oxidized and the interval between the contact sections of the regions 15, 18 is determined at that time. Opening 19 are bored, and electrodes 20, 20' are formed.
Inventors:
SHIBA HIROSHI
Application Number:
JP7121683A
Publication Date:
February 09, 1984
Filing Date:
April 22, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/78; H01L21/28; H01L21/3205; H01L21/331; H01L29/72; H01L29/73; (IPC1-7): H01L21/28; H01L29/72; H01L29/78
Attorney, Agent or Firm:
Uchihara Shin