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Title:
SEMICONDUCTOR MEMORY
Document Type and Number:
Japanese Patent JPS60167188
Kind Code:
A
Abstract:

PURPOSE: To decrease the current consumption of a data line by dividing the memory and cell and block configuration of a word unit through a logic gate into plural pieces connecting said pieces with a common data line and separately reading out said blocks by selection of an X decoder.

CONSTITUTION: Word lines WL.L and WL.R of memory are devided to the right/left through an X decoder for every 16 rows of one-block 32-row memory cells so as to simultaneously input/output eight bits of memory cell MC selection. By taking logic with one address signal, for example, A8 in the X decoder XDEC, either of left word line WL.L or right word line WL.R is activated. As a result, the word lines for memory cell selection is reduced to half, and the current consumption flowing through a data line load MOS transistor LMOS, and the memory cell MC can be reduced to half.


Inventors:
SASAKI TOSHIO
MINATO OSAMU
SASAKI YUKIO
KINOSHITA MASAMI
MASUHARA TOSHIAKI
Application Number:
JP27065284A
Publication Date:
August 30, 1985
Filing Date:
December 24, 1984
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
G11C11/41; G11C7/00; (IPC1-7): G11C11/34
Domestic Patent References:
JPS51163830U1976-12-27
JPS5619584A1981-02-24
JPS5668988A1981-06-09
JPS5694576A1981-07-31
Attorney, Agent or Firm:
Junnosuke Nakamura



 
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