Title:
SURFACE ILLUMINATING TYPE LIGHT EMITTING DIODE
Document Type and Number:
Japanese Patent JPS5853872
Kind Code:
A
Abstract:
PURPOSE:To obtain a high coupling efficiency while the positioning accuracy is eased during coupling to an optical fiber by providing a semiconductor layer having a larger refraction index than that of substrate between the active layer and semiconductor substrate and making the thickness maximum on the same center axis as that of the light emitting region. CONSTITUTION:The plane (001) of an InP substrate 21 is etched in circular with the HCl+H3PO4 solution, difference in shape at the cross sections (0-1-1), (01-1) is eased by the melt-back of proper composition and a smooth concave 23 is formed with good reproducibility. Then, the N-InGaAsP 22, N-InP 12, InGaAsP active layer 13, P-InP clad 14, P<+> InGaAsP cap 15 are stacked. The composition of active layer 22 should be selected so that the wavelength of light emitted is longer than the band gap of active layer and it becomes transparent for such wavelength. The electrodes 17, 18 are provided and the light emitted from the restricted region of the active layer 13 is converted to the parallel light beam when curvature of plane 23 of the lens layer 22 is selected adequately and it can be obtainedd from the plane 24 with good efficiency. Thereby, the pertinent diode can be connected to optical fiber with an efficiency near to the theoretical value while easing the aligning accuracy.
Inventors:
IWAMOTO KUNIAKI
Application Number:
JP15171881A
Publication Date:
March 30, 1983
Filing Date:
September 25, 1981
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L33/14; H01L33/20; H01L33/30; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Uchihara Shin