Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6037772
Kind Code:
A
Abstract:
PURPOSE: To reduce the resistance value of an Si wiring and the contact resistance with an upper Si wiring by covering the bottom and side surfaces of the Si wiring with a metallic film.
CONSTITUTION: A diffused layer 12 and an insulation film 13 are provided on the surface of an Si substrate 11, a Ti film 14 is formed to a recess from, an Si wiring 15 is buried therein, and the layers 12 and the Si wiring are connected by means of a connection hole. The structure of Si wiring by this structure extremely reduces in contact resistance.
Inventors:
IWAMATSU SEIICHI
Application Number:
JP14701883A
Publication Date:
February 27, 1985
Filing Date:
August 10, 1983
Export Citation:
Assignee:
SUWA SEIKOSHA KK
International Classes:
H01L21/3205; H01L21/28; H01L23/52; H01L29/43; H01L29/45; (IPC1-7): H01L21/88
Attorney, Agent or Firm:
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