PURPOSE: To form a vapor deposited film having good quality and a sputtered film continuously and easily by fixing a substrate in a vessel of a prescribed atmosphere, and moving either one of an evaporating source or a sputtering source thereby performing vapor deposition and sputtering.
CONSTITUTION: A sputtering electrode 4 and a sputtering shutter 15 are first rotated and moved so as to be retreated to the position where they do not obstruct vapor deposition, in the stage of laminating a vapor deposited film and a sputtered film of the same pattern on a substrate 5. The substrate 5 is heated to a prescribed temp. with a heater 16, whereafter a material to be vapor deposited is evaporated from an evaporating source 3 and a shutter 14 for vapor deposition is rotated and moved to form a vapor deposited film on the substrate 5 through the pattern holes of a mask 5. The shutter 14 is then moved to the part above the source 3 to stop the evaporation from the source 3 and the electrode 4 and the shutter 15 are rotated and moved to the position facing the substrate 5. The substrate 5 is heated to the temp. in the stage of sputtering, gaseous Ar is introduced to start sputtering, and the shutter 15 is moved so as to form a sputtered film through the holes of the mask 6.
KUBOTA HITOSHI
AIUCHI SUSUMU
| JPS5546760U | 1980-03-27 |