PURPOSE: To enable to make the element of a double diffusion type bipolar semiconductor device to be formed in a fine type, and to be arranged in high density by a method wherein the surface of an emitter electrode is covered with an insulating film, and a collector electrode is formed on the insulating film.

CONSTITUTION: A second insulating film 11 consisting of an SiO2 film is formed on the surface of an emitter electrode 7, and the edge part of a collector electrode 8 led out from the surface of a collector contact layer 4 is extended on the insulating film 11. Accordingly, to provide a margin for isolation between the emitter electrode 7 and the collector electrode 8 becomes unnecessarily, the interval L1 between the collector electrode 8 and the emitter electrode 7 can be reduced sharply, not only the pattern can be formed in a fine type, but also series resistance of the collector can be reduced, and the electric characteristic of the element can be enhanced.