Title:
INSULATION OF SEMICONDUCTOR ION SENSOR
Document Type and Number:
Japanese Patent JPS6056247
Kind Code:
A
Abstract:
PURPOSE: To obtain an exellent insulating semiconductor ion sensor, by coating a semiconductor ion sensor with thermoset resin containing thixotropic agent and hardening it to allow it to assure excellent insulation.
CONSTITUTION: A semiconductor sensor 3 is fixed on a base plate 12 and epoxy resin 13 added with thixotropic agent is coated on scribed areas and lead-wire terminals without infiltration of bubbles and the resin is allowed to harden. Wateproofness and insulating property of thus insulated semiconductor sensor can stand for a year and more at normal temperature and pressure and the epoxy resin can be replaced by other thermoset resins.
Inventors:
HANASATO YOSHIO
SHIONO SATORU
SHIONO SATORU
Application Number:
JP16450283A
Publication Date:
April 01, 1985
Filing Date:
September 07, 1983
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01N27/00; G01N27/414; H01L21/56; (IPC1-7): G01N27/00; G01N27/30; H01L23/28
Attorney, Agent or Firm:
Masuo Oiwa