Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5817635
Kind Code:
A
Abstract:
PURPOSE:To obtain a semiconductor device having high density and high reliability by employing an impurity for all surfaces of the positions to be formed with a buried layer by an oxidized film isolating technique and using impurity having relatively large automatic doping to the peripheral edge. CONSTITUTION:Sb is deposited on the overall N<+> type buried layer, and As having substantially equal diffusion constant is deposited only on the periphery of the buried layer. Since the As has larger quantity of automatic doping than the Sb, the raising layer 11 of N<+> type effectively becomes large at the outer periphery of the N<+> type buried layer as shown by the steps c-e, the pitch displacement at the time of forming the N<+> type buried layer, even if irregular thickness of the epitaxial layer and the irregular depth of the isolating groove are irregularly performed, the channel layer of an inverting P<+> type layer can be sufficiently shielded, thereby increasing the process designing margin and performing the high integration.
Inventors:
IKEDA HIROSHI
Application Number:
JP11508381A
Publication Date:
February 01, 1983
Filing Date:
July 24, 1981
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/316; H01L21/331; H01L21/74; H01L21/76; H01L29/73; (IPC1-7): H01L21/76; H01L21/95; H01L29/72
Attorney, Agent or Firm:
Toshiyuki Usuda