Title:
PUNICTIDE SOURCE AND SUPPLYING METHOD
Document Type and Number:
Japanese Patent JPS60177616
Kind Code:
A
Abstract:
A film deposition apparatus characterised in that it comprises: (A) a reservoir for containing pnictide; (B) means for passing an inert gas therethrough; (C) a film desposition reaction chamber; and (D) means for supplying inert gas carrying vapour species after passing through the said pnictide to the said reaction chamber. A process for the supply of a pnictide vapour species to a film deposition process characterised in that it comprises passing an inert gas through a reservoir of heated pnictide. Referring to the accompanying illustrative diagram, there may be identified reservoir (30), means (B) may comprise tube (28), a chamber (C) is indicated at (22) and means (D) may comprise tube (60). Such a pnictide bubbler feed system may be used to supply Pnictide4 species for various film deposition processes, including chemical vapour deposition, sputtering, vacuum deposition and molecular beam epitazy. Films of pnictide, polypnictide and other pnictide compounds may be deposited for semiconductor and other applications including insulation and passivation. The pnictides used may include phosphorus, arsenic and antimony. The present invention represents an advance over the prior art
Inventors:
MAAKU AREN KUTSUKU
SUUZAN UENDEI GAASUTEN
SUUZAN UENDEI GAASUTEN
Application Number:
JP13348284A
Publication Date:
September 11, 1985
Filing Date:
June 29, 1984
Export Citation:
Assignee:
STAUFFER CHEMICAL CO
International Classes:
C23C14/06; C23C14/00; C23C16/448; H01L21/203; H01L21/31; (IPC1-7): C23C14/06; C23C16/22; H01L21/203; H01L21/31
Attorney, Agent or Firm:
Aoki Akira