PURPOSE: To enable to perform a high speed switching operation by a method wherein a conductive layer, which is electrically insulated, is provided between the bonding pad to be connected to a gate electrode and a source electrode respectively and the specific region located on a substrate.

CONSTITUTION: A conductive layer 7 is provided on a P type region 2, which is connected to a source electrode 9, through the intermediary of an insulating film 5. Said conductive layer 7 is formed simultaneously with a gate electrode 6 using the same material. On the layer 7', a gate bonding pad 10 is provided through the intermediary of an insulating film 8. On the other hand, a conductive layer 7' is provided between a bonding pad 10 and the region 2 through the intermediary of insulating films 5' and 8'. As the layer 7' is electrically insulated, no effect is given to the capacitance between the gate and the source. Said layer 7' is formed together with the electrode 6 simultaneously using the same material. Thus, by providing the layer 7, the capacitance between the pad 10 and the layer 2, which is the capacitance between the gate and the source in other words, can be reduced. Also, by providing the layer 7', no capacitance is present between the electrode 9 and a layer 2'. Accordingly, the capacitance between the gate and the source is reduced, thereby enabling to perform a high speed switching operation.