Title:
PRODUCTION OF SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS5939791
Kind Code:
A
Abstract:
PURPOSE:To form a silicon single crystal film having high quality in the desired position on a substrate, by providing an oxidized film of silicon and a polycrystalline silicon film provided with a level difference on the substrate then subjecting the films to a recrystallization treatment by melting. CONSTITUTION:A polycrystalline silicon film 23 is formed on an oxidized film 22 of silicon formed on a silicon substrate 21 and a level difference 24 is formed on the film 23 by using a photoetching method or the like. Laser light is irradiated to the region A including the part 24 and the peripheral part thereof to melt the film 23, thereby forming molten silicon 25. The molten silicon is allowed to cool and the molten silicon is cooled and solidified with the central point O of the part 24 having the lower temp. owing to the higher rate of cooling as a base point, whereby the material for semiconductors having the film 23, the polycrystalline silicon 25' formed in the stage of recrystallization and the single crystal silicon film 26 formed by the recrystallization on the substrate 21 through the film 22 is obtd.
Inventors:
SASAKI MASAYOSHI
HAGIWARA SHIROU
HAGIWARA SHIROU
Application Number:
JP14770082A
Publication Date:
March 05, 1984
Filing Date:
August 27, 1982
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
C30B13/06; C30B13/00; H01L21/20; (IPC1-7): C30B1/02; H01L21/02; H01L21/20