PURPOSE: To prevent dissolution of an underneath resist and formation of a mixed layer and to simplify a lithographic process by using a satd. hydrocarbon for the solvent of a polysiloxane type resist used for a resist to senstitive to electron beam, X-rays, or UV rays.
CONSTITUTION: A satd. hydrocarbon is used for the solvent of a polysiloxane (PSL) type resist to be used as the resist sensitive to electron beams, X-rays, or UV rays. Such a solvent is chain or cyclic satd. hydrocarbon having a boiling point of 120W170°C, such as n-octane, various kinds of nonanes, various kinds of decanes, undecanes, and their mixtures. Even when the PSL type resist layer 8 is formed on a novolak resin resist layer 3 by using the PSL type resist soln. contg. such a solvent, the layer 3 is prevented from being dissolved and forming a mixed layer, thus not necessitating an operation, such as prebaking of the layer 3, and permitting simplification and speeding up of the lithographic process. Striation phenomenon does not occur and a thin uniform film can be formed.
MIYAMAE SATORU
TORAY SILICONE CO