Title:
METHOD FOR MASK INSPECTION
Document Type and Number:
Japanese Patent JPS607129
Kind Code:
A
Abstract:
PURPOSE:To automatically detect defects such as scratches on a reticle being inspected by a method wherein the reticle being inspected and an inversion reticle are transcribed on a photosensitive material on the same wafer by positioning, and thus the pattern developed is detected by the utilization of light scattering. CONSTITUTION:A mark reticle R1 is arranged above a projection lens 1, and marks RM1 and RM2 for reticle alignment are formed thereto. The mark RM1 is observed by means of a microscope 2 for reticle alignment, while the mark RM2 by means of a microscope 3. The wafer W is placed on a two-dimensional moving stage 5 and thus can be moved to the X and Y directions of a rectangular-coordinate system XY by a driving part 6. Two microscopes 8 and 9 for wafer alignment are arranged in the periphery of the lens 1; the microscope 8 observes the mark on the wafer W and detects the position in the X direction, and the microscope 9 detects that in the Y direction.
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Inventors:
TANIMOTO SHIYOUICHI
Application Number:
JP11385783A
Publication Date:
January 14, 1985
Filing Date:
June 24, 1983
Export Citation:
Assignee:
NIPPON KOGAKU KK
International Classes:
H01L21/30; G01N21/94; G03F1/00; H01L21/027; H01L21/66; (IPC1-7): H01L21/30
Attorney, Agent or Firm:
Takao Watanabe
Next Patent: JPS607130