Title:
METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS605096
Kind Code:
A
Abstract:
PURPOSE:To prevent the dissolution of the component of the crucible and to produce a high-purity single crystal, in the production of single crystal by Czochralski process, by using a DC electric source having little ripple content for the resistance heating of the Czochralski apparatus. CONSTITUTION:Three-phase current A is supplied from the three-phase electric source 1 to the switching regulator DC electric source 2. The three-phase current A is converted to the DC current having extremely low ripple content by the DC electric source 2 according to the control signal C transmitted from the controlling device 4, and the DC current is supplied to the heater 3 for the resistance heating of the Czochralski single crystal growth apparatus. The content of the ripple having a frequency of <=1kHz in the DC current is made <=6% by this process, resulting in the prevention of the dissolution of crucible components in the molten raw material and the production of a uniform single crystal having high purity.
Inventors:
FUTAKI TAKEHIKO
Application Number:
JP11238883A
Publication Date:
January 11, 1985
Filing Date:
June 22, 1983
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
International Classes:
C30B15/14; (IPC1-7): C30B15/14
Domestic Patent References:
| JPS5874594A | 1983-05-06 | |||
| JPS5346247A | 1978-04-25 |
Attorney, Agent or Firm:
Ryoichi Yamamoto
Next Patent: JPS605097