Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60126813
Kind Code:
A
Abstract:
PURPOSE:To improve crystallimity of a single crystal semiconductor film on the surface side and on the interfacial side together by a method wherein after the neighborhood of the interface between the single crystal semiconductor film and an insulating single crystal substrate is converted into an amorphous substance according to ion implantation, the amorphous layer thereof is converted into a single crystal alyer according to heat treatment. CONSTITUTION:A single crystal Si vapor phase growth film 2 is formed on a sapphire single crystal substrate 1. Then, after a wafer is fitted inclining the (100) face at 45 deg. as to make the ion incident direction to coincide with the [110] direction of the film 2, Si ions are implanted according to channeling ion implantation, and the ion beam is scanned in parallel with the [001] direction. Accordingly, an amorphous layer 3 is formed on the Si-sapphire interfacial side, heat treatment is performed in succession to make the layer 3 to perform solid phase epitaxial growth from the surface side, and a recrystallized layer 4 is formed. At this time, the interfacial side can be converted into the amorphous substance without destroying arrangement of atoms in the neighborhood of the surface according to the channeling ion implantation method.
Inventors:
OOTA TAKAO
MATSUSHITA YOSHIAKI
MATSUSHITA YOSHIAKI
Application Number:
JP23538683A
Publication Date:
July 06, 1985
Filing Date:
December 14, 1983
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L21/20; H01L21/205; H01L21/86; (IPC1-7): H01L21/205; H01L21/86
Attorney, Agent or Firm:
Takehiko Suzue