Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS58165347
Kind Code:
A
Abstract:
PURPOSE:To melt down a metal layer by low power laser lights by a method wherein a metallic layer is formed making a part of its surface black colored with high light absorption factor so that a wiring of integrated circuit may be cut down as necessary. CONSTITUTION:The impurity regions 52, 53 as wiring with high concentration are separately formed on the internal surface of a semiconductor substrate 51. Firstly, for example, Mo layer 56 is evaporated to make a part of the surface of Al layer 55 black colored. Secondly the surface of the layer 56 is etched to make the processed metallic surface black colored remarkably deteriorating the reflecting power of any incoming laser lights. Thirdly a wiring with region to be cut down and a passivation film is formed. Then laser lights 57 are irradiated to melt down the laminated structure of layers 56 and 55.
Inventors:
NAKASE MAKOTO
Application Number:
JP4855182A
Publication Date:
September 30, 1983
Filing Date:
March 26, 1982
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/822; H01L21/3205; H01L21/82; H01L23/52; H01L27/04; (IPC1-7): H01L21/82; H01L27/04
Attorney, Agent or Firm:
Takehiko Suzue