Title:
MATERIAL FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS58145138
Kind Code:
A
Abstract:
PURPOSE:To supply a low cost material having high reliability for the semiconductor device by a method wherein AgCl is made to be contained in the material. CONSTITUTION:AgCl is molten at the melting point of AgCl (449 deg.C) or more in a quartz crucible, it is casted to form an ingot, and after it is formed in a film type by a rolling mill, a disk of 2mm.phi diameter, 0.5mm. film thickness is formed by a press. Then the AgCl disk is put between a tungsten metalized alumina substrate and an Si chip, and is baked in a conveyer furnace in the N2 atmosphere, at 550 deg.C for the 5min peak.
Inventors:
WATANABE YOSHINOBU
Application Number:
JP2767582A
Publication Date:
August 29, 1983
Filing Date:
February 22, 1982
Export Citation:
Assignee:
TANAKA MASSEY KK
International Classes:
H01L21/52; H01L21/58; (IPC1-7): H01L21/58
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