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Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JPS598199
Kind Code:
A
Abstract:

PURPOSE: To make the uniform selective access possible, by indicating the address, where a defective storage element exists, as Ai and setting an optional Ai address signal electrode to the second value when this signal electrode has the first value Vcc and setting it to the first value when it has the second value.

CONSTITUTION: Addresses of defective elements are defined as A=A0, A1WAn. When an Ai address signal electrode 2 has the second value, the Ai address signal electrode 2 and a power source electrode 3 are short-circuited by a wire bond 5. When the Ai address signal electrode 2 has the first value, this electrode 2 and an earth electrode 4 are short-circuited by the wire bond 5. Thus, storage elements are accessed by the uniform selecting system.


Inventors:
OGAWA TOSHIYUKI
HIDA YOUICHI
Application Number:
JP11593682A
Publication Date:
January 17, 1984
Filing Date:
July 02, 1982
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G11C29/00; G11C29/04; (IPC1-7): G11C29/00
Domestic Patent References:
JPS5771598A1982-05-04
Attorney, Agent or Firm:
Masuo Oiwa