DEVICE FOR LIQUID-PHASE EPITAXIAL GROWTH AND LIQUID-PHASE EPITAXIAL GROWTH USING IT

Japanese Patent JPS5918193

A

PURPOSE:To prepare a wafer having the expected properties, by forming a layer on a base previously, feeding melt from a through hole having a smaller pattern than it to the layer to form the latter layer so that the raw material at the side edges of the former layer is prevented from melting in the melt of the latter layer. CONSTITUTION:The base A is arranged in the hollow of the sliding plate 2 for placing the base, the sliding plate 2 is slid against the fixed plate 3 for retaining the melt by the pushing lever 13, brought into contact successively with the melt M1, M2 and M3 kept in the bath B1, B2 and B3 for retaining the melt at the bottom of the fixed plate 3, and three layers are successively subjcected to liquid-phase growth on the base A. The base A is slid until it is placed under the bath 4 for retaining the melt at the bottom of the base A. The pushing lever 13 is inverted, the sliding plate 11 for retaining the top melt is slid until the bath C4 for retaining the melt K4 is placed on the bath B4, the melt K4 is introduced to the bath B4, brought into contact with the former layer formed on the base A and subjected to liquid-phase growth. The through hole of the bath B4 is constructed to have a pattern with a diameter smaller than the through holes of the baths B1-B3.

KONDOU SUSUMU
NAGAI HARUO

JP12471382A

January 30, 1984

July 17, 1982

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NIPPON TELEGRAPH & TELEPHONE

C30B19/00; C30B19/06; H01L21/208; (IPC1-7): C30B19/00; H01L21/208

Shoji Tanaka

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