PURPOSE: To mount a semiconductor in a high density by forming the wire bonding surface of an insulating substrate and a cap sealing surface in the same plane, thereby reducing the size of the profile of the substrate.
CONSTITUTION: A bonding pad of a semiconductor pellet 2 which is mounted by a solder material 4 of gold-silicon on a pellet mounting surface 5 in a cavity 3 of an insulating substrate 1 of a package is electrically connected to metallized wirings of the wire bonding surface of the substrate 1 via a wire 6. The wire bonding surface is formed in the same plane as the sealing surface of a cap 8, and the cap 8 is hermetically sealed through a low melting point glass 9 on an insulating film 12. Thus, a wire bonding and a cap sealing can be achieved in a narrow area, thereby reducing the size of the insulator 1.
JPH06244190 | SEMICONDUCTOR INTEGRATED CIRCUIT |
JP6130312 | Semiconductor device and its producing method |
OKINAGA TAKAYUKI
OOTSUKA KANJI
HITACHI LTD