Title:
MANUFACTURE OF SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS5972720
Kind Code:
A
Abstract:
PURPOSE:To enable to deposite and grow the required semiconductor on a substrate using a laser beam by a method wherein the laser beam is irradiated onto the substrate in the condition supplying raw material vapor and gas, and the semiconductor layer is deposited and grown according to thermal decomposition reaction on the substrate of the irradiated part. CONSTITUTION:The substrate 1 on a processing table 2 is heated by a heater 3, and preheating is continued. A chamber 7 is exhausted by a vacuum pump, and is supplied with gas of an element aiming to be deposited, SiH4 for example, from a supply port 72. The amplified powerful laser beam is outputted from an oscillator 8, bent as to irradiate perpendicularly to the surface of the substrate 1 by a reflecting mirror 9, and is condensed as to be focused on the surface of the substrate according to a lens 10. The irradiating point on the surface of the substrate 1 is heated rapidly at 1,000 deg.C or more according to irradiation thereof, and gas is thermally decomposed to deposit and grow Si. The shape to be deposited is previously programed and inputted in an NC controller 6, motors 4, 5 are driven to transfer the processing table 2 in the desired shape, the laser beam irradiating point is scanned in the desired shape, and Si is deposited and grown thereto.
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Inventors:
INOUE KIYOSHI
Application Number:
JP18417082A
Publication Date:
April 24, 1984
Filing Date:
October 19, 1982
Export Citation:
Assignee:
INOUE JAPAX RES
International Classes:
C23C16/48; H01L21/205; H01L21/268; (IPC1-7): H01L21/263
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