PURPOSE: To certainly correct the defect of a photomask by selectively irradiating defective areas with energy beams after allowing the main face of the photomask to absorb gas for CVD for a recessed defect of a transparent film, and after allowing the main face of the photomask to absorb gas for etching for a projecting defect.

CONSTITUTION: A defective area 4 is selectively irradiated with energy beams EB, and a correcting film 6 is accumulated on the defective area 4, after allowing the main face of a photomask 1 to absorb gas G for CVD. And also, when the defective is a projecting defective 7, the defective area 7 is selectively irradiated with the energy beams EB, and the defective area 7 is operated for etching, after allowing the main face of the photomask 1 to absorb the gas for etching. Thus, the defect of a transparent film 3 of the photomask 1 for phase shift can be accurately corrected.