Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5928344
Kind Code:
A
Abstract:
PURPOSE:To form the pattern surface into a gentle taper and eliminate the disconnection of a wiring provided thereon, by a method wherein when a polycrystalline Si film, which is formed on an insulating film provided on a semiconductor substrate, is patterned, diffusion or ion implantation is effected to an intermediate part of the thickness of the Si film, and the etching rate at the surface layer of the Si film is set to be high. CONSTITUTION:An insulating film 2 is provided on a semiconductor substrate 1, and a polycrystalline Si film 3 is deposited on the film 2. Diffusion or ion implantation is effected to an intermediate part of the thickness of the film 3 to form a polycrystalline Si film 5 different in film quality, i.e., high in etching rate. Then, a thin oxide film 6 is formed by oxidation on the surface of the film 5, and a photoresist film 7 is provided on the oxide film 6 in a predetermined pattern. Etching is effected to remove the exposed part of the film 6. With the remaining film 6 used as a mask, the different-quality film 5 and the film 3 thereunder are etched to obtain under the film 6 a laminate of the films 5 and 3 in which the film 5 on the film 3 is smaller in width than the film 3. The film 6 is removed, and an Al wiring 9 is deposited on the whole surface including the laminate through an insulating film 8.
More Like This:
| JPH01239942 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
| JPS59148359 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
| JP4440415 | Substrate processing equipment and processing method |
Inventors:
IKEYAMA KAZUTAKA
Application Number:
JP13900482A
Publication Date:
February 15, 1984
Filing Date:
August 10, 1982
Export Citation:
Assignee:
KYUSHU NIPPON ELECTRIC
International Classes:
H01L21/306; (IPC1-7): H01L21/306
Attorney, Agent or Firm:
Uchihara Shin