Title:
PHOTOTRANSISTOR
Document Type and Number:
Japanese Patent JPS6043875
Kind Code:
A
Abstract:
PURPOSE:To obtain a phototransistor having high light-receiving sensitivity without using a burying diffusion process by forming an emitter region shaped along a recessed section formed on the surface of a semiconductor substrate and a base region, which contains the emitter region and is shaped along the emitter region, in a region containing the recessed section. CONSTITUTION:An emitter region 17 shaped along a recessed section 23 formed to one part of the surface of a semiconductor substrate 21 and a base region 19, which contains the emitter region 17 and is shaped along the emitter region 17, are formed in a region containing the recessed section 23. The recessed section 23 is formed to a layer such as an epitaxial layer 20 on the substrate such as a silicon substrate 21 through etching, and a base 19 and an emitter 17 are formed through impurity diffusion in the order. Accordingly, a phototransistor having high light-receiving sensitivity can be realized without increasing saturation voltage and retarding the speed of responce.
Inventors:
MACHIDA SHIYOUICHI
KIYOHASHI KAZUO
KIYOHASHI KAZUO
Application Number:
JP15131783A
Publication Date:
March 08, 1985
Filing Date:
August 19, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L31/10; H01L31/11; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Uchihara Shin