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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5913363
Kind Code:
A
Abstract:

PURPOSE: To reduce and mount power supply wirings, to relieve the complication of wirings remarkably and reduce cost, and to prevent the vanishing of written informations at the time of the trouble of a power supply by disposing a radioactive substance and a transducer, which converts the radiant energy of the substance into electric energy and supplies the energy as the power supply, to either of a chip or a package.

CONSTITUTION: A radioactive substance region 2 containing the radioactive substance, such as americium, radium, etc. is formed to the surface layer of a p type silicon substrate 1. An n+ type impurity region 3 is formed annularly in the vicinity of the radioactive substance region 2 while surrounding the radioactive substance region 2, and the n+ impurity region 3 constitutes the transducer generating electromotive force from radiation irradiated from the radioactive substance region 2 by a p-n junction between the region 3 and the p type silicon substrate 1. Power supply terminals 4, 4' are formed to the n+ impurity region 3 and the p type silicon substrate 1 in order to extract the electromotive force. The power supply terminals 4, 4' are each connected to the power line or the ground line of a LSI circuit.


Inventors:
IWAI HIROSHI
Application Number:
JP12172982A
Publication Date:
January 24, 1984
Filing Date:
July 13, 1982
Export Citation:
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Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/822; H01L27/02; H01L27/04; H01L27/10; (IPC1-7): H01L27/04; H01L27/10
Attorney, Agent or Firm:
Takehiko Suzue